High power broadband InGaAs/GaAs quantum dot superluminescent diodes

被引：44

作者：

Heo, DC

Song, JD

Choi, WJ

Lee, JI

Jung, JC

Han, IK

机构：

[1] Korea Inst Sci & Technol, Nano Devices Res Ctr, Seoul 130650, South Korea

[2] Korea Univ, Dept Radio Engn, Seoul 136701, South Korea

来源：

ELECTRONICS LETTERS | 2003年 / 39卷 / 11期

关键词：

D O I：

10.1049/el:20030519

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The characteristics of superluminescent diodes (SLDs) using InGaAs quantum dot is presented. In0.5Ga0.5As quantum dot is formed by a short period superlattice of InAs and GaAs. The output power and the spectral width of the SLD are 0.9 W and 80 run, respectively, covering the range 980-1060 nm.

引用

收藏

页码：863 / 865

页数：3

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