High power GaInAsP/InP strained quantum well superluminescent diode with tapered active region

被引：40

作者：

Yamatoya, T ^{[1
]}

Mori, S ^{[1
]}

Koyama, F ^{[1
]}

Iga, K ^{[1
]}

机构：

[1] Tokyo Inst Technol, Precis & Intelligence Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1999年 / 38卷 / 9A期

关键词：

wavelength division multiplexing; spectrum-slicing; multiwavelength light source; superluminescent diode; tapered active region; quantum wells;

D O I：

10.1143/JJAP.38.5121

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

High-power broadband superluminescent diodes (SLDs) have been studied for spectrum-sliced multiwavelength light sources for use in wavelength division multiplexing systems. We present the design and fabrication of high-power broadband GaInAsP/InP strained quantum well SLDs with a tapered active region emitting in a 1.55 mu m wavelength band. The fabricated device exhibited the high-power operation of over 1 watt. Also, the spectral width has been increased to over 60 nm by using chirped multiquantum wells which have different well thicknesses.

引用

页码：5121 / 5122

页数：2

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