MULTIPLE-QUANTUM-WELL GAINAS/GAINASP TAPERED BROAD-AREA AMPLIFIERS WITH MONOLITHICALLY INTEGRATED WAVE-GUIDE LENS FOR HIGH-POWER APPLICATIONS

被引：27

作者：

KOYAMA, F ^{[1
]}

LIOU, KY ^{[1
]}

DENTAI, AG ^{[1
]}

TANBUNEK, T ^{[1
]}

BURRUS, CA ^{[1
]}

机构：

[1] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1993年 / 5卷 / 08期

关键词：

D O I：

10.1109/68.238253

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have demonstrated a 1.48-mum tapered broad-area semiconductor laser amplifier with a monolithically integrated waveguide lens. The gain saturation characteristics of the tapered amplifier were examined. A maximum output power of 300 mW and a 3-dB saturation power of 200 mW under quasi-CW conditions were obtained from the amplifier without the wave-guide lens. Also, output power of 200 mW was obtained with a broad emission spectrum of approximately 30 nm when the device was used as a superluminescent diode. In addition, the amplified output was focused to a single lobe by the monolithically integrated aspheric waveguide lens, which may be useful for efficient coupling of the output into a single-mode fiber.

引用

页码：916 / 919

页数：4

共 9 条

[1] A NEW STRUCTURE FOR HIGH-POWER TW-SLA [J].