n-Doping of Organic Electronic Materials using Air-Stable Organometallics

被引：162

作者：

Guo, Song ^{[2
,3
]}

Kim, Sang Bok ^{[2
,3
]}

Mohapatra, Swagat K. ^{[2
,3
]}

Qi, Yabing ^{[1
]}

Sajoto, Tissa ^{[2
,3
]}

Kahn, Antoine ^{[1
]}

Marder, Seth R. ^{[2
,3
]}

Barlow, Stephen ^{[2
,3
]}

机构：

[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA

[2] Georgia Inst Technol, Sch Chem & Biochem, Atlanta, GA 30332 USA

[3] Georgia Inst Technol, Ctr Organ Photon & Elect, Atlanta, GA 30332 USA

来源：

ADVANCED MATERIALS | 2012年 / 24卷 / 05期

基金：

美国国家科学基金会;

关键词：

doping; organic electronics; charge transport; organometallics; AROMATENKOMPLEXE VON METALLEN; TRANSPORT LAYERS; THIN-FILMS; PYRONIN-B; REDUCTION; DEVICES; DOPANT; DIMERIZATION; TRANSISTORS; COMPLEXES;

D O I：

10.1002/adma.201103238

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Air-stable dimers of sandwich compounds including rhodocene and (pentamethylcyclopentadienyl)(arene) ruthenium and iron derivatives can be used for n-doping electron-transport materials with electron affinities as small as 2.8 eV. A p-i-n homojunction diode based on copper phthalocyanine and using rhodocene dimer as n-dopant shows a rectification ratio of greater than 106 at 4 V.

引用

页码：699 / +

页数：6

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