Decamethylcobaltocene as an efficient n-dopant in organic electronic materials and devices

被引:98
作者
Chan, Calvin K. [1 ]
Zhao, Wei [1 ]
Barlow, Stephen [2 ]
Marder, Seth [2 ]
Kahn, Antoine [1 ]
机构
[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA
[2] Georgia Inst Technol, Dept Chem & Biochem, Ctr Organ Photon & Elect, Atlanta, GA 30332 USA
基金
美国国家科学基金会;
关键词
organic semiconductor; n-type doping; metallocene; photoemission spectroscopy; phthalocyanine;
D O I
10.1016/j.orgel.2008.03.003
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
n-Doping of copper phthalocyanine (CuPc), which has an electron affinity (EA) of 3.52 eV, by decamethylcobaltocene (DMC) is demonstrated. DMC has a remarkably low solid-state ionization energy (IE) of 3.3 eV, as measured by ultra-violet photoemission spectroscopy (UPS). Further UPS measurements show a large 1.4 eV upward shift of the Fermi-level within the single particle gap of CuPc between the p- and n-doped films. n-Doping is also confirmed by current-voltage (I-V) measurements, which show a 10(6)-fold increase in current density due to improved electron injection and enhanced conductivity of the bulk film. An organic p-i-n CuPc homojunction is also fabricated using F-4-TCNQ and DMC as p- and n-dopants, respectively. Current-voltage characteristics demonstrate excellent rectification with a turn on voltage of approximately 1.3 eV, which is consistent with the built-in voltage measured by UPS and capacitance-voltage (C-V) measurements. (C) 2008 Elsevier BY. All rights reserved.
引用
收藏
页码:575 / 581
页数:7
相关论文
共 45 条
  • [1] Localized charge transfer in a molecularly doped conducting polymer
    Aziz, Emad E.
    Vollmer, Antje
    Eisebitt, Stefan
    Eberhardt, Wolfgang
    Pingel, Patrick
    Neher, Dieter
    Koch, Norbert
    [J]. ADVANCED MATERIALS, 2007, 19 (20) : 3257 - +
  • [2] Negative capacitance caused by electron injection through interfacial states in organic light-emitting diodes
    Bisquert, J
    Garcia-Belmonte, G
    Pitarch, A
    Bolink, HJ
    [J]. CHEMICAL PHYSICS LETTERS, 2006, 422 (1-3) : 184 - 191
  • [3] Low voltage organic light emitting diodes featuring doped phthalocyanine as hole transport material
    Blochwitz, J
    Pfeiffer, M
    Fritz, T
    Leo, K
    [J]. APPLIED PHYSICS LETTERS, 1998, 73 (06) : 729 - 731
  • [4] Interface electronic structure of organic semiconductors with controlled doping levels
    Blochwitz, J.
    Fritz, T.
    Pfeiffer, M.
    Leo, K.
    Alloway, D. M.
    Lee, P. A.
    Armstrong, N. R.
    [J]. ORGANIC ELECTRONICS, 2001, 2 (02) : 97 - 104
  • [5] Electron energetics at surfaces and interfaces: Concepts and experiments
    Cahen, D
    Kahn, A
    [J]. ADVANCED MATERIALS, 2003, 15 (04) : 271 - 277
  • [6] PHOTOELECTRON-SPECTRA OF METALLOCENES
    CAULETTI, C
    GREEN, JC
    KELLY, MR
    POWELL, P
    VANTILBORG, J
    ROBBINS, J
    SMART, J
    [J]. JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1980, 19 (04) : 327 - 353
  • [7] Contact potential difference measurements of doped organic molecular thin films
    Chan, C
    Gao, WY
    Kahn, A
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2004, 22 (04): : 1488 - 1492
  • [8] Incorporation of cobaltocene as an n-dopant in organic molecular films
    Chan, Calvin K.
    Kahn, Antoine
    Zhang, Qing
    Barlow, Stephen
    Marder, Seth R.
    [J]. JOURNAL OF APPLIED PHYSICS, 2007, 102 (01)
  • [9] N-type doping of an electron-transport material by controlled gas-phase incorporation of cobaltocene
    Chan, Calvin K.
    Amy, Fabrice
    Zhang, Qing
    Barlow, Stephen
    Marder, Seth
    Kahn, Antoine
    [J]. CHEMICAL PHYSICS LETTERS, 2006, 431 (1-3) : 67 - 71
  • [10] Molecular n-type doping of 1,4,5,8-naphthalene tetracarboxylic dianhydride by pyronin B studied using direct and inverse photoelectron spectroscopies
    Chan, CK
    Kim, EG
    Brédas, JL
    Kahn, A
    [J]. ADVANCED FUNCTIONAL MATERIALS, 2006, 16 (06) : 831 - 837