Optical waveguides in porous silicon pre-patterned by localised nitrogen implantation.

被引:12
作者
Arrand, HF
Benson, TM
Sewell, P
Loni, A
机构
[1] Univ Nottingham, Dept Elect & Elect Engn, Nottingham NG7 2RD, England
[2] Dev & Evaluat Res Agcy, Malvern WR14 3PS, Worcs, England
基金
英国工程与自然科学研究理事会;
关键词
optical waveguide; modelling; silicon on insulator technology; porous silicon;
D O I
10.1016/S0022-2313(98)00096-9
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
FIPOS technology forms islands of silicon isolated from a silicon substrate by (oxidised) porous silicon. The larger refractive index of the silicon islands suggests their use as optical waveguides. Sets of these silicon islands have been fabricated and the anticipated waveguiding has been observed at wavelengths of 1.15 and 1.3 mu m in the silicon islands. However, the dominant waveguiding in these FIPOS structures is observed in the porous silicon between the silicon islands, close to the sample surface. A simple dynamic model of the anodisation process has been developed to explain the origin of this unexpected waveguiding. (C) 1999 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:199 / 202
页数:4
相关论文
共 4 条
[1]  
BERGER MG, 1996, THESIS FORSCHUNGSZEN
[2]   A NEW DIELECTRIC ISOLATION METHOD USING POROUS SILICON [J].
IMAI, K .
SOLID-STATE ELECTRONICS, 1981, 24 (02) :159-&
[3]   NITROGEN-IMPLANTED SILICON .1. DAMAGE ANNEALING AND LATTICE LOCATION [J].
MITCHELL, JB ;
PRONKO, PP ;
SHEWCHUN, J ;
THOMPSON, DA ;
DAVIES, JA .
JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) :332-334
[4]  
Saad Y., 1996, Iterative Methods for Sparse Linear Systems