Tribological behavior of silicon-incorporated diamond-like carbon films

被引:94
作者
Kim, MG [1 ]
Lee, KR [1 ]
Eun, KY [1 ]
机构
[1] KIST, Thin Film Technol Res Ctr, Seoul 130650, South Korea
关键词
mechanism; PACVD; Si-DLC films; tribochemical reaction;
D O I
10.1016/S0257-8972(98)00770-1
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
The tribological behavior between silicon-incorporated diamond-like carbon (Si-DLC) films and a steel ball was investigated from the viewpoint of tribochemical reaction. The films were deposited on Si(100) wafers from radio-frequency glow discharge of mixtures of benzene and dilute silane gases. The tribological behavior was investigated by using a ball-on-disk type wear rig in ambient atmosphere. The variation of the friction coefficient with the number of contact cycles was compared among films having of various silicon concentrations from 0 to 9.5 at%. It was observed that the friction coefficient decreased with increasing silicon concentration in the films. Furthermore, the friction behavior became more stable even at a small amount of silicon less than 0.5 at% incorporated. By analyzing the composition of the debris formed, we could conclude that the low and stabilized friction coefficient is intimately related to the formation of the silicon-rich oxide debris. These results are consistent with a previously suggested mechanism that the hydrated silica debris results in the low friction coefficient in a humid environment. (C) 1999 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:204 / 209
页数:6
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