Radiation damage in silicon detectors for high-energy physics experiments

被引：81

作者：

Bruzzi, M ^{[1
]}

机构：

[1] Univ Florence, Dipartimento Energet, I-50139 Florence, Italy

[2] Ist Nazl Fis Nucl, I-50125 Florence, Italy

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2001年 / 48卷 / 04期

关键词：

detectors; high-energy physics; radiation damage; silicon;

D O I：

10.1109/23.958706

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Radiation effects in silicon detectors are discussed in view of their application in future high-energy physics experiments. An overview is given of the major changes in the operational parameters due to radiation damage and their origin in the radiation-induced microscopic disorder in the silicon bulk. The principal radiation hardening technologies are described that have been adopted by the high-energy physics community to face the hostile radiation environment where silicon pixel and microstrip detectors will operate in the Large Hadron Collider.

引用

页码：960 / 971

页数：12

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