Self annealing effect on neutron irradiated silicon detectors investigated by TSC analysis

被引：5

作者：

Biggeri, U

Borchi, E

Bruzzi, M

Bates, SJ

Glaser, M

Lemeilleur, F

Furetta, C

机构：

[1] CERN,CH-1211 GENEVA,SWITZERLAND

[2] UNIV ROMA LA SAPIENZA,ROME,ITALY

来源：

NUCLEAR PHYSICS B | 1995年

关键词：

D O I：

10.1016/0920-5632(95)00574-9

中图分类号：

O412 [相对论、场论]; O572.2 [粒子物理学];

学科分类号：

摘要：

Silicon diodes irradiated with similar to 1MeV neutron fluences of 2x10(12) and 2x10(13) cm(-2) have been analysed by means of Thermally Stimulated Current (TSC) technique and Capacitance versus Voltage measurements. Both the radiation induced lattice defects and the effective carrier concentration N-eff have been measured after irradiation during six months of room temperature self annealing. The sample irradiated with the highest fluence has shown the reverse annealing effect and correspondingly, a broad peak around 0.340-0.400eV is seen to increase strongly for self annealing. Tentative identities for the deep levels responsible for the broad peak are carbon related acceptor traps.

引用

页码：488 / 495

页数：8

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