RADIATION EFFECTS OF DOUBLE-SIDED SILICON STRIP SENSORS

被引：92

作者：

TAMURA, N

HATAKENAKA, T

IWATA, Y

KUBOTA, M

OHSUGI, T

OKADA, M

UNNO, Y

ASO, T

ISHIZUKA, M

MIYATA, H

ANDO, A

HATANAKA, K

MIZUNO, Y

GOTO, M

KOBAYASHI, S

MURAKAMI, A

INOUE, K

SUZUKI, Y

DAIGO, M

YAMAMOTO, K

YAMAMURA, K

机构：

[1] HIROSHIMA UNIV,DEPT PHYS,HIGASHIHIROSHIMA,HIROSHIMA 724,JAPAN

[2] KEK,NATL LAB HIGH ENERGY PHYS,DIV PHYS,TSUKUBA,IBARAKI 305,JAPAN

[3] NIIGATA UNIV,DEPT PHYS,NIIGATA 95021,JAPAN

[4] SAGA UNIV,DEPT PHYS,SAGA 840,JAPAN

[5] UNIV TOKYO,INST COSM RAY RES,TANASHI,TOKYO 188,JAPAN

[6] WAKAYAMA MED COLL,WAKAYAMA 64963,JAPAN

[7] HAMAMATSU PHOTON CO LTD,HAMAMATSU,SHIZUOKA 435,JAPAN

[8] OSAKA UNIV,NUCL PHYS RES CTR,IBARAKI,OSAKA 567,JAPAN

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1994年 / 342卷 / 01期

关键词：

D O I：

10.1016/0168-9002(94)91419-2

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A series of proton-beam irradiations was performed in order to investigate the radiation damage of silicon photodiodes and double-sided silicon strip sensors. Measurements were made for the leakage current, bias resistance, interstrip isolation, annealing and responses to an infrared light pulse and beta-rays. Some problems in the production of radiation-hard double-sided strip sensors were observed. However, it has been shown that most of them can be resolved by adequately designing the strip structure, the implantation density and the materials used for various parts of the sensor. It is therefore possible to obtain a double-sided silicon strip sensor which works even after charged-particle irradiation of 20 kGy.

引用

页码：131 / 136

页数：6

共 11 条

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