TSC DATA-ANALYSIS ON HEAVILY IRRADIATED SILICON DETECTORS

被引：19

作者：

BRUZZI, M

机构：

[1] Dipartimento di Energetica, 50139 Firenze

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1995年 / 352卷 / 03期

关键词：

D O I：

10.1016/0168-9002(95)90016-0

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Thermally stimulated current analysis has been performed on silicon detectors irradiated with high fast neutron fluences. The complexity of the TSC spectra required the development of a numerical procedure to deconvolute peak components. The numerical code has been used to directly calculate trap parameters: a comparison between numerical and experimental results is shown. Twentyone peaks related to various lattice defects have been found for the highest fluence of irradiation of 10(14) n/cm(2).

引用

页码：618 / 621

页数：4

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