ELECTRICAL AND SPECTROSCOPIC ANALYSIS OF NEUTRON-IRRADIATED SILICON DETECTORS

被引：8

作者：

BALDINI, A ^{[1
]}

BORCHI, E ^{[1
]}

BRUZZI, M ^{[1
]}

SPILLANTINI, P ^{[1
]}

机构：

[1] INST NAZL FIS NUCL,I-50125 FLORENCE,ITALY

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 1992年 / 315卷 / 1-3期

关键词：

D O I：

10.1016/0168-9002(92)90701-5

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The radiation hardness of silicon p+ n junctions used to detect particles in high energy physics was investigated by making electrical and thermally stimulated current (TSC) spectroscopy measurements before and after irradiation with fast neutron fluences ranging from 5 x 10(11) to 5 x 10(13) neutrons/cm2. Leakage current and capacitance vs reverse voltage and capacitance vs the test signal frequency of the capacitance meter were measured. The main energy levels introduced in the detector bulk by irradiation were measured with the TSC technique and the concentrations of the associated traps were calculated. A peak dependent on the filling voltage impulse applied during measurement was observed in the most irradiated samples.

引用

页码：182 / 187

页数：6

共 8 条

[1]

BORCHI E, NUCL INSTR METH A, V279

[2]

BORCHI E, 1991, PHYS STAT SOL K, V27, P124

[3]

BORCHI E, 1992, NUCL INSTRUM METH A, V315, P156

[4] IMPURITY CENTERS IN PN JUNCTIONS DETERMINED FROM SHIFTS IN THERMALLY STIMULATED CURRENT AND CAPACITANCE RESPONSE WITH HEATING RATE [J].