Growth of highly strain-relaxed Ge1-xSnx/virtual Ge by a Sn precipitation controlled compositionally step-graded method

被引：109

作者：

Takeuchi, Shotaro ^{[1
]}

Shimura, Yosuke ^{[1
]}

Nakatsuka, Osamu ^{[1
]}

Zaima, Shigeaki ^{[1
]}

Ogawa, Masaki ^{[2
]}

Sakai, Akira ^{[3
]}

机构：

[1] Nagoya Univ, Grad Sch Engn, Dept Crystalline Mat Sci, Chikusa Ku, Nagoya, Aichi 4648603, Japan

[2] Nagoya Univ, EcoTopia Sci Inst, Nagoya, Aichi 4648603, Japan

[3] Osaka Univ, Grad Sch Engn, Osaka 5608531, Japan

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 23期

关键词：

D O I：

10.1063/1.2945629

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated Sn precipitation and strain relaxation behaviors in the growth of Ge1-xSnx layers on virtual Ge substrates (v-Ge) for strain engineering of Ge. By varying misfit strain at Ge1-xSnx/v-Ge and Ge1-ySny/Ge1-xSnx interfaces, we found that a critical misfit strain controls the onset of Sn precipitation at a given thickness of the Ge1-xSnx layer. A compositionally step-graded method, in which the critical misfit strain is taken into account, was applied to the growth of strain-relaxed Ge1-xSnx layers on v-Ge. Postdeposition annealing at each growth step led to lateral propagation of threading dislocations preexisting in the layer and originating from v-Ge, which resulted in high degree of strain relaxation. An epitaxial Ge layer was grown on the strain-relaxed Ge1-xSnx layer and an in-plane tensile strain of 0.68% was achieved. (C) 2008 American Institute of Physics.

引用

页数：3

共 12 条

[1] Ge-Sn semiconductors for band-gap and lattice engineering [J].