Strain-induced band gap shrinkage in Ge grown on Si substrate

被引：342

作者：

Ishikawa, Y ^{[1
]}

Wada, K ^{[1
]}

Cannon, DD ^{[1
]}

Liu, JF ^{[1
]}

Luan, HC ^{[1
]}

Kimerling, LC ^{[1
]}

机构：

[1] MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 13期

关键词：

D O I：

10.1063/1.1564868

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Band gap shrinkage induced by tensile strain is shown for Ge directly grown on Si substrate. In Ge-on-Si pin diodes, photons having energy lower than the direct band gap of bulk Ge were efficiently detected. According to photoreflectance measurement, this property is due to band gap shrinkage. The origin of the shrinkage is not the Franz-Keldysh effect but rather tensile strain. It is discussed that the generation of such a tensile strain can be ascribed to the difference of thermal expansion between Ge and Si. Advantages of this tensile Ge for application to photodiode are also discussed. (C) 2003 American Institute of Physics.

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页码：2044 / 2046

页数：3

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