In situ monitoring of GaN reactive ion etching by optical emission spectroscopy

被引：10

作者：

Yoshida, H ^{[1
]}

Urushido, T ^{[1
]}

Miyake, H ^{[1
]}

Hiramatsu, K ^{[1
]}

机构：

[1] Mie Univ, Fac Engn, Dept Elect & Elect Engn, Tsu, Mie 5148507, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2001年 / 40卷 / 4A期

关键词：

GaN; dry etching; chlorine plasma; optical emission spectroscopy (OES);

D O I：

10.1143/JJAP.40.L313

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The optical emission during GaN reactive ion etching (RIE) using Cl-2 plasma was monitored in situ by optical emission spectroscopy (OES). The optical emission intensity of atomic Ga is in proportion to the etch rate, and the time-integrated values of the optical emission intensities from atomic Ga and molecular N-2 are proportionally correlated to the etched volumes of GaN. It is found that monitoring of the Ga and N-2 optical emissions allows in situ control of the etching depth of GaN even if the etch rate fluctuates during the etching process.

引用

页码：L313 / L315

页数：3

共 11 条

[1] REACTIVE ION ETCHING OF GALLIUM NITRIDE IN SILICON TETRACHLORIDE PLASMAS [J].

ADESIDA, I ;

MAHAJAN, A ;

ANDIDEH, E ;

KHAN, MA ;

OLSEN, DT ;

KUZNIA, JN .

APPLIED PHYSICS LETTERS, 1993, 63 (20) :2777-2779

[2] P-TYPE CONDUCTION IN MG-DOPED GAN TREATED WITH LOW-ENERGY ELECTRON-BEAM IRRADIATION (LEEBI) [J].

AMANO, H ;

KITO, M ;

HIRAMATSU, K ;

AKASAKI, I .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (12) :L2112-L2114

[3] The dry etching of group III nitride wide-bandgap semiconductors [J].

Gillis, HP ;

Choutov, DA ;

Martin, KP .

JOM-JOURNAL OF THE MINERALS METALS & MATERIALS SOCIETY, 1996, 48 (08) :50-55

[4]

KHAN MA, 1993, APPL PHYS LETT, V62, P1786, DOI 10.1063/1.109549

[5] OBSERVATION OF A 2-DIMENSIONAL ELECTRON-GAS IN LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITED GAN-ALXGA1-XN HETEROJUNCTIONS [J].

KHAN, MA ;

KUZNIA, JN ;

VANHOVE, JM ;

PAN, N ;

CARTER, J .

APPLIED PHYSICS LETTERS, 1992, 60 (24) :3027-3029

[6]

LACROIX Y, 2000, 47 SPRING M

[7] InGaN/GaN/AlGaN-based laser diodes with modulation-doped strained-layer superlattices [J].

Nakamura, S ;

Senoh, M ;

Nagahama, S ;

Iwasa, N ;

Yamada, T ;

Matsushita, T ;

Kiyoku, H ;

Sugimoto, Y ;

Kozaki, T ;

Umemoto, H ;

Sano, M ;

Chocho, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1997, 36 (12A) :L1568-L1571

[8] DRY-ETCHING AND IMPLANTATION CHARACTERISTICS OF III-N ALLOYS [J].

PEARTON, SJ ;

VARTULI, CB ;

SHUL, RJ ;

ZOLPER, JC .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1995, 31 (03) :309-317

[9] STUDY OF CHEMICALLY ASSISTED ION-BEAM ETCHING OF GAN USING HCL-GAS [J].

PING, AT ;

ADESIDA, I ;

KHAN, MA .

APPLIED PHYSICS LETTERS, 1995, 67 (09) :1250-1252

[10] Inductively coupled plasma etching of GaN [J].

Shul, RJ ;

McClellan, GB ;

Casalnuovo, SA ;

Rieger, DJ ;

Pearton, SJ ;

Constantine, C ;

Barratt, C ;

Karlicek, RF ;

Tran, C ;

Schurman, M .

APPLIED PHYSICS LETTERS, 1996, 69 (08) :1119-1121

← 1 2 →