In situ monitoring of GaN reactive ion etching by optical emission spectroscopy

被引：10

作者：

Yoshida, H ^{[1
]}

Urushido, T ^{[1
]}

Miyake, H ^{[1
]}

Hiramatsu, K ^{[1
]}

机构：

[1] Mie Univ, Fac Engn, Dept Elect & Elect Engn, Tsu, Mie 5148507, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 2001年 / 40卷 / 4A期

关键词：

GaN; dry etching; chlorine plasma; optical emission spectroscopy (OES);

D O I：

10.1143/JJAP.40.L313

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The optical emission during GaN reactive ion etching (RIE) using Cl-2 plasma was monitored in situ by optical emission spectroscopy (OES). The optical emission intensity of atomic Ga is in proportion to the etch rate, and the time-integrated values of the optical emission intensities from atomic Ga and molecular N-2 are proportionally correlated to the etched volumes of GaN. It is found that monitoring of the Ga and N-2 optical emissions allows in situ control of the etching depth of GaN even if the etch rate fluctuates during the etching process.

引用

页码：L313 / L315

页数：3