PECVD prepared SnO2 thin films for ethanol sensors

被引：110

作者：

Hellegouarc'h, F ^{[1
]}

Arefi-Khonsari, F ^{[1
]}

Planade, R ^{[1
]}

Amouroux, J ^{[1
]}

机构：

[1] Univ Paris 06, Lab Genie Proc Plasmas & Traitements Surfaces, ENSCP, F-75005 Paris, France

来源：

SENSORS AND ACTUATORS B-CHEMICAL | 2001年 / 73卷 / 01期

关键词：

PECVD; tin oxide; gas sensor;

D O I：

10.1016/S0925-4005(00)00603-1

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

SnO2 thin films are elaborated by a PECVD process in a RF glow discharge reactor. Two kinds of as-deposited films have been studied: unbiased (diode reactor) and biased ones (triode reactor) according to their properties and their response to specific gases such as ethanol. Characterization of the films are carried out by different techniques: FTIR, AES, X-ray diffraction, AFM in order to explain the modifications generated by the bias voltage. The detection results show best sensitivities (S = R-a/R-s) for unbiased films to ethanol at 450 degreesC (S = 45 for 10 ppm). (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：27 / 34

页数：8

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