Influence of GaAs capping on the optical properties of InGaAs/GaAs surface quantum dots with 1.5 μm emission

被引：163

作者：

Saito, H ^{[1
]}

Nishi, K ^{[1
]}

Sugou, S ^{[1
]}

机构：

[1] NEC Corp Ltd, Optoelect & High Frequency Device Res Labs, Ibaraki 3058501, Japan

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 19期

关键词：

D O I：

10.1063/1.122576

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Uncapped InGaAs quantum dots (surface quantum dots) on a GaAs substrate emit photoluminescence at a long wavelength of 1.53 mu m at room temperature. When the surface dots are covered by a GaAs cap layer, the emission energy of the dots increases by 287 meV. This large energy shift is mainly caused by inducing compressive stress from the cap layer. In segregation on the surface led to greater photoluminescence intensity in the surface quantum dots even at room temperature due to the suppression of nonradiative surface recombination. (C) 1998 American Institute of Physics. [S0003-6951(98)03145-3].

引用

页码：2742 / 2744

页数：3

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