Submicron three-dimensional infrared GaAs/AlxOy-based photonic crystal using single-step epitaxial growth

被引：8

作者：

Sabarinathan, J ^{[1
]}

Bhattacharya, P ^{[1
]}

Zhu, DH ^{[1
]}

Kochman, B ^{[1
]}

Zhou, WD ^{[1
]}

Yu, PC ^{[1
]}

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Solid State Elect Lab, Ann Arbor, MI 48109 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 20期

关键词：

D O I：

10.1063/1.1372198

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A relatively simple technique is demonstrated to fabricate three-dimensional face-centered-cubic infrared photonic crystals with submicron feature sizes using GaAs-based technology, single-step epitaxial growth, and lateral wet oxidation. The photonic crystals were fabricated with feature sizes (a) of 1.5 and 0.5 mum. Transmission measurements reveal a stopband centered at 1.0 mum with a maximum attenuation of 10 dB for the submicron (a = 0.5 mum) photonic crystal. This technique is scalable to small photonic crystal periodicity and hence to shorter wavelengths. (C) 2001 American Institute of Physics.

引用

页码：3024 / 3026

页数：3

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