Sensitivity of a micromechanical displacement detector based on the radio-frequency single-electron transistor

被引：84

作者：

Blencowe, MP ^{[1
]}

Wybourne, MN ^{[1
]}

机构：

[1] Dartmouth Coll, Dept Phys & Astron, Hanover, NH 03755 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 23期

关键词：

D O I：

10.1063/1.1331090

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate the tunneling shot noise limits on the sensitivity of a micromechanical displacement detector based on a metal junction, radio-frequency single-electron transistor (rf SET). In contrast with the charge sensitivity of the rf-SET electrometer, the displacement sensitivity improves with increasing gate voltage bias and, with a suitably optimized rf SET, displacement sensitivities of 10(-6) Angstrom/root Hz may be possible. (C) 2000 American Institute of Physics. [S0003-6951(00)02150-1].

引用

页码：3845 / 3847

页数：3

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