Charge sensitivity of radio frequency single-electron transistor

被引：55

作者：

Korotkov, AN ^{[1
]}

Paalanen, MA

机构：

[1] SUNY Stony Brook, Dept Phys, Stony Brook, NY 11794 USA

[2] Aalto Univ, Low Temp Lab, FIN-02015 Espoo, Finland

来源：

APPLIED PHYSICS LETTERS | 1999年 / 74卷 / 26期

关键词：

D O I：

10.1063/1.123258

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A theoretical analysis of the charge sensitivity of the radio frequency single-electron transistor (rf-SET) is presented. We use the "orthodox" approach and consider the case when the carrier frequency is much less than I/e where I is the typical current through rf-SET. The optimized noise-limited sensitivity is determined by the temperature T, and at low T it is only 1.4 times worse than the sensitivity of conventional single-electron transistor. (C) 1999 American Institute of Physics. [S0003-6951(99)03026-0].

引用

页码：4052 / 4054

页数：3

共 19 条

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