Persistent photoconductivity in Cu(In,Ga)Se2 heterojunctions and thin films prepared by sequential deposition

被引:86
作者
Rau, U
Schmitt, M
Parisi, J
Riedl, W
Karg, F
机构
[1] Univ Bayreuth, Inst Phys, D-95440 Bayreuth, Germany
[2] Siemens AG, ZT EN 2, D-80807 Munchen, Germany
[3] Siemens Solar GMBH, D-80807 Munchen, Germany
关键词
D O I
10.1063/1.121762
中图分类号
O59 [应用物理学];
学科分类号
摘要
A characteristic, reversible metastability is observed for Cu(In,Ga)Se-2 thin films and ZnO/CdS/Cu(In,Ga)Se-2 heterojunctions. Annealing at 80 degrees C leads to a decrease of the dark conductivity of the thin films by up to a factor of 2 at room temperature and several orders of magnitude when measured at lower temperatures. By exposure to light, the initial state can be re-established. This reenhancement of the dark conductivity can be looked at as persistent photoconductivity. Admittance measurements at Cu(In,Ga)Se-2 heterojunction solar cells display a reversible shift of the activation energy of a distinct dielectric loss peak ranging from 70 to about 160 meV upon illumination or annealing at 80 degrees C, respectively. We propose that both phenomena as well as commonly observed light-soaking effects of Cu(In,Ga)Se, solar cells have a common origin. (C) 1998 American Institute of Physics. [S0003-6951(98)01228-5].
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页码:223 / 225
页数:3
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