Gate inversion effect in Si1-xGex/HfO2/Si metal-oxide-semiconductor devices -: art. no. 243507

被引：2

作者：

Silva, JCE ^{[1
]}

de Oliveira, EL ^{[1
]}

de Sousa, JS ^{[1
]}

Freire, JAK ^{[1
]}

Freire, VN ^{[1
]}

Farias, GA ^{[1
]}

机构：

[1] Univ Fed Ceara, Dept Fis, BR-60455760 Fortaleza, Ceara, Brazil

来源：

APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 24期

关键词：

D O I：

10.1063/1.1946919

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The electrical properties of polycrystalline Si1-xGex/HfO2/Si metal-oxide-semiconductor (MOS) devices are investigated theoretically by solving self-consistently the Poisson and Schrodinger equations. Our calculations demonstrate that the combination of HfO2 as dielectric film and polycrystalline gates causes charge inversion in both substrate and gate layer for ultrathin oxide layers. This effect is a consequence of the high dielectric constant of HfO2, and it is expected to occur for all high-kappa-based polygated MOS devices. However, the relative doping concentration between polycrystalline gate and substrate can be used to decrease the effect of gate inversion. (c) 2005 American Institute of Physics.

引用

页码：1 / 3

页数：3

共 11 条

[1] Physical and electrical characterization of Hafnium oxide and Hafnium silicate sputtered films [J].

Callegari, A ;

Cartier, E ;

Gribelyuk, M ;

Okorn-Schmidt, HF ;

Zabel, T .

JOURNAL OF APPLIED PHYSICS, 2001, 90 (12) :6466-6475

[2] Compatibility of polycrystalline silicon gate deposition with HfO2 and Al2O3/HfO2 gate dielectrics [J].

Gilmer, DC ;

Hegde, R ;

Cotton, R ;

Garcia, R ;

Dhandapani, V ;

Triyoso, D ;

Roan, D ;

Franke, A ;

Rai, R ;

Prabhu, L ;

Hobbs, C ;

Grant, JM ;

La, L ;

Samavedam, S ;

Taylor, B ;

Tseng, H ;

Tobin, P .

APPLIED PHYSICS LETTERS, 2002, 81 (07) :1288-1290

[3]

GOLAPAN S, 2000, APPL PHYS LETT, V80, P4416

[4] Fermi-level pinning at the polysilicon/metal oxide interface - Part I [J].

Hobbs, CC ;

Fonseca, LRC ;

Knizhnik, A ;

Dhandapani, V ;

Samavedam, SB ;

Taylor, WJ ;

Grant, JM ;

Dip, LG ;

Triyoso, DH ;

Hegde, RI ;

Gilmer, DC ;

Garcia, R ;

Roan, D ;

Lovejoy, ML ;

Rai, RS ;

Hebert, EA ;

Tseng, HH ;

Anderson, SGH ;

White, BE ;

Tobin, PJ .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 2004, 51 (06) :971-977

[5] Properties of polycrystalline Si1-xGex films grown by ultrahigh vacuum CVD using Si2H6 and GeH4 [J].

Kang, SK ;

Kim, JJ ;

Ko, DH ;

Kang, HB ;

Yang, CW ;

Ahn, TH ;

Yeo, IS ;

Lee, TW ;

Lee, YH .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2003, 150 (03) :G167-G172

[6] Evaluation of the electrical properties and interfacial reactions for the polycrystalline Si1-xGex(x=0,0.6)/HfO2 gate stack [J].

Kang, SK ;

Nam, S ;

Min, BG ;

Nam, SW ;

Ko, DH ;

Cho, MH .

APPLIED PHYSICS LETTERS, 2003, 83 (10) :2004-2006

[7] Observation of reduced boron penetration and gate depletion for poly-Si0.8Ge0.2 gated PMOS devices [J].

Lee, WC ;

King, TJ ;

Hu, CM .

IEEE ELECTRON DEVICE LETTERS, 1999, 20 (01) :9-11

[8]

MULLER RS, 1987, DEVICE ELECT INTEGRA

[9] Scaled silicon MOSFET's: Degradation of the total gate capacitance [J].

Vasileska, D ;

Schroder, DK ;

Ferry, DK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1997, 44 (04) :584-587

[10]

VASILESKA D, 1999, J MODELING SIMULATIO, V1, P49

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