Strain-induced large low-field magnetoresistance in Pr0.67Sr0.33MnO3 ultrathin films

被引：103

作者：

Wang, HS ^{[1
]}

Li, Q ^{[1
]}

机构：

[1] Penn State Univ, Dept Phys, University Pk, PA 16802 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 16期

关键词：

D O I：

10.1063/1.122461

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report magnetoresistance (MR) measurements in very thin Pr0.67Sr0.33MnO3 films (5-15 nm) grown on LaAlO3 substrates. The films are under compressive strain imposed by the lattice mismatch with the substrate. The MR ratio [R(H)-R-0]/R-0 is similar to 92% at H=800 Oe and T = 70 K when the magnetic field is applied perpendicular to the film plane and is much smaller when the magnetic field is parallel to the film plane. We suggest that the large low-field MR is due to strain-induced magnetic anisotropy and spin-dependent scattering at domain boundaries. (C) 1998 American Institute of Physics. [S0003-6951(98)03642-0].

引用

页码：2360 / 2362

页数：3

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