Confirmation of AlGaAs crystal domain inversion using asymmetric wet etching and optical second-harmonic generation methods

The occurrence of crystal domain inversion on a (001) GaAs substrate was confirmed by a direct observation method based on asymmetric wet etching of AlGaAs and an optical method based on second-harmonic generation. Direct evidence of crystalline inversion was exhibited in samples with a periodic structure prepared by wafer bonding, selective removal of the bonded GaAs, and metal-organic vapor phase epitaxial regrowth on the patterned template.