High quality SrTiO3 tunnel barrier obtained by pulsed laser deposition

被引：13

作者：

Fix, T.

Da Costa, V.

Ulhaq-Bouillet, C.

Colis, S.

Dinia, A.

Bouzehouane, K.

Barthelemy, A.

机构：

[1] Univ Strasbourg, Ecole Europeenne Chim Polymeres & Mat Strasbourg, CNRS,Unite Mixte Rech 7504, Inst Phys & Chim Mat Strasbourg, F-67034 Strasbourg, France

[2] Unite Mixte Phys CNRS Thales, F-91767 Palaiseau, France

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 08期

关键词：

D O I：

10.1063/1.2773752

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The quality of a SrTiO3 tunnel barrier deposited by pulsed laser deposition on SrTiO3 (001)parallel to Sr2FeMoO6 is investigated. Epitaxy and two-dimensional growth are obtained and the root-mean-square roughness is 0.3 nm. The distribution of the local current measured by conductive atomic force microscopy indicates that hot spots are almost absent. The standard deviation of the barrier thickness distribution is lower than 0.05 nm. Current-voltage characteristics of patterned magnetic tunnel junctions provide evidence of the high quality of the barrier. The electrical properties of the SrTiO3 barrier are at least as good as the ones obtained by sputtering or e-beam evaporation. (C) 2007 American Institute of Physics.

引用

页数：3

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