Containerless solidification of Si-Ge binary alloy by means of laser heating electromagnetic levitation

Pure Si and Ge, and;their alloys were stably levitated and melted using an electromagnetic levitator combined with a laser heating unit. A temperature measurement method using a mono- or multicolor pyrometer for the semiconductor was discussed, and a calibration method for a monocolor pyrometer was developed by deriving their spectral emissivities at each melting point. The maximum undercooling was measured as a function of composition. This result corresponded well with the calculated value using the classical theory of steady state nucleation in binary metallic melts.