Additive jet printing of polymer thin-film transistors

被引：153

作者：

Paul, KE ^{[1
]}

Wong, WS ^{[1
]}

Ready, SE ^{[1
]}

Street, RA ^{[1
]}

机构：

[1] Palo Alto Res Ctr, Palo Alto, CA 94304 USA

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 10期

关键词：

D O I：

10.1063/1.1609233

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Organic thin-film transistors were fabricated by direct patterning of solution-processable semiconductors consisting of either poly(9,9(')-dioctyl-fluorene-co-bithiophene) or a regioregular poly(thiophene). Acoustic ink-jet printing was used to deposit the polymeric semiconductor onto patterned metal source-drain contacts. Printed and spin coated transistors performed identically. The regioregular poly(thiophene) exhibited a mobility of 0.1 cm(2) V-1 s(-1), on-off current ratios of similar to10(6) and low threshold voltage. (C) 2003 American Institute of Physics.

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页码：2070 / 2072

页数：3

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