Nearly ideal InP/GaAsSb/InP double heterojunction bipolar transistors with ballistically launched collector electrons

被引：16

作者：

Matine, N

Dvorak, MW

Bolognesi, CR

Xu, X

Hu, J

Watkins, SP

Thewalt, MLW

机构：

[1] Simon Fraser Univ, Sch Engn Sci, Compound Semicond Device Lab, Burnaby, BC V5A 1S6, Canada

[2] Simon Fraser Univ, Dept Phys, Burnaby, BC V5A 1S6, Canada

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 17期

关键词：

D O I：

10.1049/el:19981160

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Near-ideal abrupt heterojunction InP/GaAsSb/InP double heterojunction bipolar transistors (DHBTs) have been implemented. The GaAsSb conduction band edge is measured to be 0.18 eV higher than the InP conduction band edge, resulting in a ballistic electron launcher collector that is free of the blocking effect normally associated with GaInAs DHBTs. The collector and base current ideality factors were 1.00 and 1.05, respectively, and a very low collector offset voltage L-CE.OFF = 14 mV was measured for 5 x 12 mu m(2) self-aligned DHBTs.

引用

页码：1700 / 1702

页数：3