A NEW EFFECT AT HIGH CURRENTS IN HETEROSTRUCTURE BIPOLAR-TRANSISTORS

被引：66

作者：

TIWARI, S

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1988年 / 9卷 / 03期

关键词：

D O I：

10.1109/55.2069

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：142 / 144

页数：3

共 13 条

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[9] SYMMETRICAL-GAIN, ZERO-OFFSET, SELF-ALIGNED, AND REFRACTORY-CONTACT DOUBLE HBTS [J].

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[10] TRANSPORT AND RELATED PROPERTIES OF (GA, AL) AS/GAAS DOUBLE HETEROSTRUCTURE BIPOLAR JUNCTION TRANSISTORS [J].

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