ALGAAS INGAAS GAAS STRAINED-LAYER HETEROJUNCTION BIPOLAR-TRANSISTORS BY MOLECULAR-BEAM EPITAXY

被引：15

作者：

SULLIVAN, GJ

ASBECK, PM

CHANG, MF

MILLER, DL

WANG, KC

机构：

来源：

ELECTRONICS LETTERS | 1986年 / 22卷 / 08期

关键词：

D O I：

10.1049/el:19860286

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：419 / 421

页数：3

相关论文

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[2] FRITZ IJ, 1985, APPL PHYHS LETT, V46, P968
[3] 2 INTEGRAL RELATIONS PERTAINING TO THE ELECTRON-TRANSPORT THROUGH A BIPOLAR-TRANSISTOR WITH A NONUNIFORM ENERGY-GAP IN THE BASE REGION
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[4] LIGHT-HOLE CONDUCTION IN INGAAS/GAAS STRAINED-LAYER SUPERLATTICES
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