2 INTEGRAL RELATIONS PERTAINING TO THE ELECTRON-TRANSPORT THROUGH A BIPOLAR-TRANSISTOR WITH A NONUNIFORM ENERGY-GAP IN THE BASE REGION

被引：168

作者：

KROEMER, H

机构：

来源：

SOLID-STATE ELECTRONICS | 1985年 / 28卷 / 11期

关键词：

D O I：

10.1016/0038-1101(85)90190-X

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1101 / 1103

页数：3

共 11 条

[1]

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[7]

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[8]

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[9] THE DEPENDENCE OF TRANSISTOR PARAMETERS ON THE DISTRIBUTION OF BASE LAYER RESISTIVITY [J].

MOLL, JL ;

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[10] STORED CHARGE METHOD OF TRANSISTOR BASE TRANSIT ANALYSIS [J].

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PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1959, 47 (04) :523-527

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