Reliability of polysilicon thin film transistors on stainless steel foil substrates

We have successfully fabricated polysilicon thin film transistors on a flexible stainless steel foil substrate. Both n- and p-channel devices have been subjected to DC and AC voltage stressing, in order to provide for a basic measurement of their performance. We have compared these characteristics with results obtained from devices we have previously fabricated on quartz substrates, and have found no evidence that the stainless steel substrate has affected the reliability of the transistors. We therefore believe that polysilicon devices and circuits on steel present an attractive cost-effective alternative to transistors fabricated on more expensive substrates, without any reliability compromise.