Measuring the degree of stacking order in graphite by Raman spectroscopy

被引：369

作者：

Cancado, L. G. ^{[1
,2
]}

Takai, K. ^{[2
]}

Enoki, T. ^{[2
]}

Endo, M. ^{[3
]}

Kim, Y. A. ^{[3
]}

Mizusaki, H. ^{[3
]}

Speziali, N. L. ^{[1
]}

Jorio, A. ^{[1
]}

Pimenta, M. A. ^{[1
]}

机构：

[1] Univ Fed Minas Gerais, Dept Fis, BR-30123970 Belo Horizonte, MG, Brazil

[2] Tokyo Inst Technol, Dept Chem, Meguro Ku, Tokyo 1528551, Japan

[3] Shinshu Univ, Fac Engn, Wakasato, Nagano 3808553, Japan

来源：

CARBON | 2008年 / 46卷 / 02期

关键词：

GRAPHENE; SPECTRUM; FILMS; LAYER;

D O I：

10.1016/j.carbon.2007.11.015

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

This manuscript reports the analysis of the G' band profile in the Raman spectra of nanographites with different degrees of stacking order. Since the G' band scattering coming from the 2D and 3D phases coexisting in the same sample can be nicely distinguished, the relative volumes of 3D and 2D graphite phases present in the samples can be estimated from their Raman spectra. The comparison between Raman scattering and X-Ray diffraction data shows that Raman spectroscopy can be used as an alternative tool for measuring the degree of stacking order of graphitic systems. (c) 2007 Elsevier Ltd. All rights reserved.

引用

页码：272 / 275

页数：4

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