Sputtering process design of PZT capacitors for stable FeRAM operation

被引：8

作者：

Inoue, N ^{[1
]}

Takeuchi, T ^{[1
]}

Hayashi, Y ^{[1
]}

机构：

[1] NEC Corp Ltd, Silicon Syst Res Labs, ULSI, Res Lab, Sagamihara, Kanagawa 2291198, Japan

来源：

INTERNATIONAL ELECTRON DEVICES MEETING 1998 - TECHNICAL DIGEST | 1998年

关键词：

D O I：

10.1109/IEDM.1998.746481

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

PZT capacitors of Zr/Ti=0.35/0.65 show the wide operational margin in FeRAM devices, due to the low coercive voltage and the low dielectric constant. The sputtering of top electrodes, Ir/IrO2, in the high O-2 pressure and at low temperature avoids the damage of the PZT surface. Optimization of the composition and sputtering conditions for the top electrodes achieved a highly reliable capacitor for FeRAM.

引用

页码：819 / 822

页数：4

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