Resonant cavity longwave SiGe-Si photodetector using a buried silicide mirror

被引：15

作者：

Carline, RT ^{[1
]}

Nayar, V ^{[1
]}

Robbins, DJ ^{[1
]}

Stanaway, MB ^{[1
]}

机构：

[1] Def Res Agcy, Malvern WR14 3PS, Worcs, England

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1998年 / 10卷 / 12期

关键词：

cavity; enhanced; infrared; photodetector; resonant; SiGe-Si; silicide;

D O I：

10.1109/68.730499

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We describe a resonant cavity detector which uses epitaxial p-type SiGe-Si quantum wells for absorption which are epitaxially grown above a high reflectance tungsten silicide layer. The device operates in the 8-12-mu m band in normal incidence and exhibits a x8 enhancement in its peak photoresponse when compared to a nonresonant control device. The black body responsivity is comparable to current n-GaAs-AlGaAs detectors at 1 V making it suitable for integration in a monolithic Si-based focal plane array. Ways to optimize the device design to achieve improved performance are discussed.

引用

页码：1775 / 1777

页数：3

共 9 条

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