HETEROJUNCTION GEXSI1-X/SI INFRARED DETECTORS AND FOCAL-PLANE ARRAYS

被引：27

作者：

TSAUR, BY

CHEN, CK

MARINO, SA

机构：

来源：

OPTICAL ENGINEERING | 1994年 / 33卷 / 01期

关键词：

INFRARED TECHNOLOGY; HETEROJUNCTION DETECTORS; IRSI DETECTORS; FOCAL PLANE ARRAYS;

D O I：

10.1117/12.151535

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Heterojunction GexSi1-x/Si internal-photoemission infrared detectors are being developed for multispectral imaging in the middle-wavelength infrared (MWIR) and long-wavelength infrared (LWIR) spectral bands. The detectors, which are fabricated by molecular beam epitaxy of degenerately doped GexSi1-x heteroepitaxial layers on Si, exhibit high responsivity uniformity, low dark-current noise, tunable cutoff wavelength out to 25 mum, and excellent producibility. High-quality MWIR and LWIR thermal imagery has been obtained for 320-x244- and 400x400-element focal plane arrays consisting of GexSi1-x/Si detectors with cutoff wavelength of approximately 10 mum and monolithic CCD readout circuitry.

引用

页码：72 / 78

页数：7

共 18 条

[1] AN ABUTTABLE CCD IMAGER FOR VISIBLE AND X-RAY FOCAL PLANE ARRAYS
BURKE, BE
MOUNTAIN, RW
HARRISON, DC
BAUTZ, MW
DOTY, JP
RICKER, GR
DANIELS, PJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (05) : 1069 - 1076
[2] CROSS EF, 1982, P SPIE, V366, P10
[3] ERHARDT HG, 1984, P SOC PHOTO-OPT INST, V501, P165, DOI 10.1117/12.944660
[4] Fritz T. A., 1989, Proceedings of the SPIE - The International Society for Optical Engineering, V1052, P25, DOI 10.1117/12.951483
[5] FREE CARRIER ABSORPTION IN P-TYPE SILICON
HARA, H
NISHI, Y
[J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1966, 21 (06) : 1222 - &
[6] LOW-TEMPERATURE CHARACTERISTICS OF BURIED-CHANNEL CHARGE-COUPLED-DEVICES
KIMATA, M
DENDA, M
YUTANI, N
TSUBOUCHI, N
UEMATSU, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (06): : 975 - 980
[7] KIMATA M, 1991, P SOC PHOTO-OPT INS, V1540, P238, DOI 10.1117/12.48743
[8] Kosonocky W.F., 1987, Patent No. [US 4667213 A, 4667213]
[9] 160X244 ELEMENT PTSI SCHOTTKY-BARRIER IR-CCD IMAGE SENSOR
KOSONOCKY, WF
SHALLCROSS, FV
VILLANI, TS
GROPPE, JV
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (08) : 1564 - 1573
[10] Lin T. L., 1990, International Electron Devices Meeting 1990. Technical Digest (Cat. No.90CH2865-4), P641, DOI 10.1109/IEDM.1990.237117

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