LOW-TEMPERATURE CHARACTERISTICS OF BURIED-CHANNEL CHARGE-COUPLED-DEVICES

被引:14
作者
KIMATA, M
DENDA, M
YUTANI, N
TSUBOUCHI, N
UEMATSU, S
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1983年 / 22卷 / 06期
关键词
D O I
10.1143/JJAP.22.975
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:975 / 980
页数:6
相关论文
共 13 条
[1]  
[Anonymous], CHARGE TRANSFER DEVI
[2]   IMAGING DEVICES USING CHARGE-COUPLED CONCEPT [J].
BARBE, DF .
PROCEEDINGS OF THE IEEE, 1975, 63 (01) :38-67
[3]   FREE CHARGE-TRANSFER IN CHARGE-COUPLED DEVICES [J].
CARNES, JE ;
KOSONOCK.WF ;
RAMBERG, EG .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (06) :798-&
[4]   INFLUENCE OF BULK TRAPS ON CHARGE-TRANSFER INEFFICIENCY OF BULK CHARGE-COUPLED-DEVICES [J].
COLLET, MG .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (02) :224-227
[5]  
CROWELL EM, 1952, P I RADIO ENG, V40, P1327
[6]  
HANKEN RA, 1978, SOLID STATE ELECTRON, V21, P753
[7]   PLATINUM SILICIDE SCHOTTKY-BARRIER IR-CCD IMAGE SENSORS [J].
KIMATA, M ;
DENDA, M ;
FUKUMOTO, T ;
TSUBOUCHI, N ;
UEMATSU, S ;
SHIBATA, H ;
HIGUCHI, T ;
SAHEKI, T ;
TSUNODA, R ;
KANNO, T .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1982, 21 (01) :231-235
[8]  
KOSONOCKY WF, 1982, 14TH C 1982 INT SOL, P65
[9]  
Mohsen A. M., 1974, IEEE Transactions on Electron Devices, VED-21, P701, DOI 10.1109/T-ED.1974.17997
[10]   ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON [J].
MORIN, FJ ;
MAITA, JP .
PHYSICAL REVIEW, 1954, 96 (01) :28-35