INFLUENCE OF BULK TRAPS ON CHARGE-TRANSFER INEFFICIENCY OF BULK CHARGE-COUPLED-DEVICES

被引：8

作者：

COLLET, MG ^{[1
]}

机构：

[1] PHILIPS RES LABS,EINDHOVEN,NETHERLANDS

来源：

关键词：

D O I：

10.1109/T-ED.1976.18378

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：224 / 227

页数：4

共 14 条

COLLET, MG .

ESSER, LJM .

[3]

ESSER LJM, 1973, INT ELECTRON DEVICES, P17

[4]

ESSER LJM, 1974, ISSCC PHILADELPHIA D, P28

[5] GOLD AS A RECOMBINATION CENTRE IN SILICON [J].

FAIRFIELD, JM ;

GOKHALE, BV .

[6]

KIM CK, 1974, IEEE INT ELECTRON DE, P55

[7] GIANT TRAPS [J].

LAX, M .

[8]

MANY A, 1965, SEMICONDUCTOR SURFAC, P56

[9]

Mohsen A. M., 1974, IEEE Transactions on Electron Devices, VED-21, P701, DOI 10.1109/T-ED.1974.17997

PALS, JA .