EXPERIMENTAL-METHOD TO ANALYZE TRAPPING CENTERS IN SILICON AT VERY LOW CONCENTRATIONS

被引：13

作者：

COLLET, MG ^{[1
]}

机构：

[1] PHILIPS RES LABS,EINDHOVEN,NETHERLANDS

来源：

SOLID-STATE ELECTRONICS | 1975年 / 18卷 / 12期

关键词：

D O I：

10.1016/0038-1101(75)90170-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1077 / 1083

页数：7

相关论文

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