AN ABUTTABLE CCD IMAGER FOR VISIBLE AND X-RAY FOCAL PLANE ARRAYS

被引:181
作者
BURKE, BE [1 ]
MOUNTAIN, RW [1 ]
HARRISON, DC [1 ]
BAUTZ, MW [1 ]
DOTY, JP [1 ]
RICKER, GR [1 ]
DANIELS, PJ [1 ]
机构
[1] MIT,CTR SPACE RES,CAMBRIDGE,MA 02139
基金
美国国家航空航天局;
关键词
D O I
10.1109/16.78381
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A frame-transfer silicon CCD imager has been developed that can be closely abutted to other imagers on three sides of the imaging array and is intended for use in multichip arrays. The device has 420 x 420 pixels in the imaging and frame-store regions and is constructed using a three-phase triple-polysilicon process. Particular emphasis has been placed on achieving low-noise charge detection for low-light-level imaging in the visible and maximum energy resolution for X-ray spectroscopic applications. Noise levels of 6 electrons at 1 MHz and less than 3 electrons at 100-kHz data rates have been achieved. Imagers have been fabricated on 1000-OMEGA . cm material to maximize quantum efficiency and minimize split events in the soft X-ray regime.
引用
收藏
页码:1069 / 1076
页数:8
相关论文
共 16 条
[1]   NOISE IN BURIED CHANNEL CHARGE-COUPLED-DEVICES [J].
BRODERSEN, RW ;
EMMONS, SP .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1976, 11 (01) :147-155
[2]   420X420 CHARGE-COUPLED-DEVICE IMAGER AND 4-CHIP HYBRID FOCAL PLANE [J].
BURKE, BE ;
MOUNTAIN, RW ;
DANIELS, PJ ;
HARRISON, DC .
OPTICAL ENGINEERING, 1987, 26 (09) :890-896
[3]  
BURKE BE, 1989, FEB ISCC, P94
[4]  
BURROWS DN, 1989, P SOC PHOTO-OPT INS, V1159, P92
[5]  
ELLUL JP, 1984, P SOC PHOTO-OPT INST, V501, P117, DOI 10.1117/12.944654
[6]  
GARMIRE GP, 1988, P SOC PHOTO-OPT INS, V982, P123
[7]  
KNOLL GF, 1989, RAD DETECTION MEASUR, P455
[8]  
KOYAMA K, 1989, P SOC PHOTO-OPT INS, V1159, P510
[9]   X-RAY-IMAGING WITH A CHARGE-COUPLED DEVICE FABRICATED ON A HIGH-RESISTIVITY SILICON SUBSTRATE [J].
PECKERAR, MC ;
MCCANN, DH ;
YU, L .
APPLIED PHYSICS LETTERS, 1981, 39 (01) :55-57
[10]  
STEVENS EG, 1987, FEB ISSCC, P114