Effect of deposition conditions on stability of sputtered oxide in MOS structures

被引：5

作者：

Jelenkovic, EV

Tong, KY

机构：

[1] Department of Electronic Engineering, Hong Kong Polytechnic University, Hung Hom

来源：

MICROELECTRONICS AND RELIABILITY | 1997年 / 37卷 / 01期

关键词：

D O I：

10.1016/0026-2714(95)00246-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we investigate the relation between electrical stability and oxide deposition conditions in sputtered oxide. We found that lower sputtering pressure and lower discharge voltage with the addition of oxygen in sputtering gas mixture give better resistance to interface states generation during constant current stress. Also sputtered oxide applied in TFTs showed a remarkable stability under moderate stress fields. Copyright (C) 1996 Elsevier Science Ltd

引用

页码：159 / 169

页数：11

共 22 条

[1]

HABAERLE K, 1980, SOLID STATE ELECT, V23, P855

[2]

HOFFMAN DW, 1990, HDB PLASMA PROCESSIN, P485

[3] CORRELATION BETWEEN BREAKDOWN AND PROCESS-INDUCED POSITIVE CHARGE TRAPPING IN THIN THERMAL SIO2 [J].

HOLLAND, S ;

HU, C .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (08) :1705-1712

[4]

Jelenkovic E. V., 1995, Proceedings 1995 IEEE Hong Kong Electron Devices Meeting (Cat. No.95TH8119), P15, DOI 10.1109/HKEDM.1995.520636

[5] EFFECT OF IMPLANTED FLUORINE ON MOS STRUCTURES WITH SPUTTERED SIO2 INSULATOR [J].

JELENKOVIC, EV ;

TONG, KY ;

POON, MC ;

WONG, JSL .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (09) :1673-1678

[6]

JELENKOVIC EV, 1995, P 1995 IEEE TENCON, P274

[7] POSITIVE-CHARGE TRAPPING IN NITRIDED OXIDE AND REOXIDIZED NITRIDED OXIDE GATE DIELECTRICS [J].

KRISCH, KS ;

GROSS, BJ ;

SODINI, CG .

JOURNAL OF APPLIED PHYSICS, 1991, 70 (04) :2185-2194

[8] THE EFFECT OF SUBSTRATE-TEMPERATURE AND BIAS ON THE STRESS, CHEMICAL ETCH RATE, AND MICROSTRUCTURE OF HIGH DEPOSITION RATE SPUTTERED SIO2-FILMS [J].

MACCHIONI, CV .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (04) :2302-2308

[9]

Nicollian E. H., 1982, MOS PHYSICS TECHNOLO, P325

[10] INFRARED SPECTROSCOPIC STUDY OF SIOX FILMS PRODUCED BY PLASMA ENHANCED CHEMICAL VAPOR-DEPOSITION [J].

PAI, PG ;

CHAO, SS ;

TAKAGI, Y ;

LUCOVSKY, G .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03) :689-694

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