Controlling Electric Dipoles in Nanodielectrics and Its Applications for Enabling Air-Stable n-Channel Organic Transistors

被引：68

作者：

Chung, Yoonyoung ^{[2
]}

Verploegen, Eric ^{[1
]}

Vailionis, Arturas ^{[3
]}

Sun, Yun ^{[4
]}

Nishi, Yoshio ^{[2
]}

Murmann, Boris ^{[2
]}

Bao, Zhenan ^{[1
]}

机构：

[1] Stanford Univ, Dept Chem Engn, Stanford, CA 94305 USA

[2] Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA

[3] Stanford Inst Mat & Energy Sci, Menlo Pk, CA 94025 USA

[4] SLAC Natl Accelerator Lab, Menlo Pk, CA 94025 USA

来源：

NANO LETTERS | 2011年 / 11卷 / 03期

基金：

美国国家科学基金会;

关键词：

Electric dipoles; nanodielectrics; self-assembled monolayers; organic field-effect transistors; n-channel transistors; SELF-ASSEMBLED MONOLAYERS; FIELD-EFFECT TRANSISTORS; DEVICES; PERFORMANCE; PENTACENE; STABILITY; CIRCUITS; DIIMIDE; DENSITY;

D O I：

10.1021/nl104087u

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We present a new method to manipulate the channel charge density of field-effect transistors using dipole-generating self-assembled monolayers (SAMs) with different anchor groups. Our approach maintains an ideal interface between the dipole layers and the semiconductor while changing the built-in electric potential by 0.41-0.50 V. This potential difference can be used to change effectively the electrical properties of nanoelectronic devices. We further demonstrate the application of the SAM dipoles to enable air-stable operation of n-channel organic transistors.

引用

页码：1161 / 1165

页数：5

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