Fabrication of nanoperiodic surface structures by controlled etching of dislocations in bicrystals

被引:42
作者
Wind, RA [1 ]
Murtagh, MJ
Mei, F
Wang, Y
Hines, MA
Sass, SL
机构
[1] Cornell Univ, Dept Chem, Ithaca, NY 14853 USA
[2] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA
关键词
D O I
10.1063/1.1362330
中图分类号
O59 [应用物理学];
学科分类号
摘要
A method for the fabrication of periodic arrays of surface features with controlled spacings of 2-100 nm has been developed. This process relies on the selective etching of dislocations formed at a twist-bonded interface in a bicrystal. The production of nanoscale periodic silicon surface features with a mean spacing of 38 nm is reported. The etch rate of edge and screw dislocations is compared, and the rate of dislocation etching is found to be poorly correlated to strain. This observation calls long-held theories of dislocation etching into question. (C) 2001 American Institute of Physics.
引用
收藏
页码:2205 / 2207
页数:3
相关论文
共 13 条
[1]   Structural and electrical investigations of silicon wafer bonding interfaces [J].
Benamara, M ;
Rocher, A ;
Sopena, P ;
Claverie, A ;
Laporte, A ;
Sarrabayrouse, G ;
Lescouzeres, L ;
PeyreLavigne, A .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1996, 42 (1-3) :164-167
[2]   How to control the self-organization of nanoparticles by bonded thin layers [J].
Bourret, A .
SURFACE SCIENCE, 1999, 432 (1-2) :37-53
[3]   ELECTRON-DIFFRACTION AND MICROSCOPY STUDIES OF THE STRUCTURE OF GRAIN-BOUNDARIES IN SILICON [J].
CARTER, CB ;
FOLL, H ;
AST, DG ;
SASS, SL .
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1981, 43 (02) :441-467
[4]   An atomistic mechanism for the production of two- and three-dimensional etch hillocks on Si(111) surfaces [J].
Flidr, J ;
Huang, YC ;
Hines, MA .
JOURNAL OF CHEMICAL PHYSICS, 1999, 111 (15) :6970-6981
[5]   Ultra thin silicon films directly bonded onto silicon wafers [J].
Fournel, F ;
Moriceau, H ;
Magnea, N ;
Eymery, J ;
Rouvière, JL ;
Rousseau, K ;
Aspar, B .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2000, 73 (1-3) :42-46
[6]  
GHANDI SK, 1983, VLSI FABRICATION PRI, P377
[7]  
HIGASHI GS, 1993, HDB SEMICONDUCTOR WA, P433
[8]  
SANGWAL K, 1987, ETCHING CRYSTALS
[9]   DISLOCATION SUB-BOUNDARY ARRAYS IN ORIENTED THIN-FILM BICRYSTALS OF GOLD [J].
SCHOBER, T ;
BALLUFFI, RW .
PHILOSOPHICAL MAGAZINE, 1969, 20 (165) :511-&
[10]   EXPERIMENTAL AND THEORETICAL-STUDIES OF THE DISLOCATION-STRUCTURE OF NIO-PT INTERFACES [J].
SHIEU, FS ;
SASS, SL .
ACTA METALLURGICA ET MATERIALIA, 1990, 38 (09) :1653-1667