Multiple atomic configurations of the a edge threading dislocation in GaN

被引：27

作者：

Chen, J ^{[1
]}

Ruterana, P ^{[1
]}

Nouet, G ^{[1
]}

机构：

[1] ISMRA, UMR 6508 CNRS, CRISMAT, ESCTM, F-14050 Caen, France

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2001年 / 82卷 / 1-3期

关键词：

atomic structure; dislocations; energy; empirical potential;

D O I：

10.1016/S0921-5107(00)00754-6

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

High-resolution transmission electron microscopy has recently shown that three atomic configurations of edge threading dislocations can exist in GaN. In this work, we have used a modified empirical potential (Stillinger-Weber) to calculate the energy of these three configurations. The obtained results show that the five-/seven-atom configuration is the most stable, and the four-atom configuration has the highest energy, confirming the experimental observations. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：117 / 119

页数：3

共 10 条

[1] An empirical potential for the calculation of the atomic structure of extended defects in wurtzite GaN [J].

Aïchoune, N ;

Potin, V ;

Ruterana, P ;

Hairie, A ;

Nouet, G ;

Paumier, E .

COMPUTATIONAL MATERIALS SCIENCE, 2000, 17 (2-4) :380-383

[2] Theory of threading edge and screw dislocations in GaN [J].

Elsner, J ;

Jones, R ;

Sitch, PK ;

Porezag, VD ;

Elstner, M ;

Frauenheim, T ;

Heggie, MI ;

Oberg, S ;

Briddon, PR .

PHYSICAL REVIEW LETTERS, 1997, 79 (19) :3672-3675

[3]

GIL B, 1998, GROUP 3 NITRIDES SEM

[4]

ISHIMURA M, 1996, PHYS STATUS SOLIDI A, V153, P431

[5] LARGE-BAND-GAP SIC, III-V NITRIDE, AND II-VI ZNSE-BASED SEMICONDUCTOR-DEVICE TECHNOLOGIES [J].

MORKOC, H ;

STRITE, S ;

GAO, GB ;

LIN, ME ;

SVERDLOV, B ;

BURNS, M .

JOURNAL OF APPLIED PHYSICS, 1994, 76 (03) :1363-1398

[6] Inversion domain and stacking mismatch boundaries in GaN [J].

Northrup, JE ;

Neugebauer, J ;

Romano, LT .

PHYSICAL REVIEW LETTERS, 1996, 77 (01) :103-106

[7] Mosaic growth of GaN on (0001) sapphire:: A high-resolution electron microscopy and crystallographic study of threading dislocations from low-angle to high-angle grain boundaries [J].

Potin, V ;

Ruterana, P ;

Nouet, G ;

Pond, RC ;

Morkoç, H .

PHYSICAL REVIEW B, 2000, 61 (08) :5587-5599

[8]

RUTERANA P, 1998, MAT RES SOC S, V482, P359

[9] COMPUTER-SIMULATION OF LOCAL ORDER IN CONDENSED PHASES OF SILICON [J].

STILLINGER, FH ;

WEBER, TA .

PHYSICAL REVIEW B, 1985, 31 (08) :5262-5271

[10] Direct observation of the core structures of threading dislocations in GaN [J].

Xin, Y ;

Pennycook, SJ ;

Browning, ND ;

Nellist, PD ;

Sivananthan, S ;

Omnes, F ;

Beaumont, B ;

Faurie, JP ;

Gibart, P .

APPLIED PHYSICS LETTERS, 1998, 72 (21) :2680-2682

← 1 →