A critical evaluation of the effective diffusion length determination in crystalline silicon solar cells from an extended spectral analysis

被引:7
作者
Keller, S [1 ]
Spiegel, M [1 ]
Fath, P [1 ]
Willeke, GP [1 ]
Bucher, E [1 ]
机构
[1] Univ Konstanz, Fac Phys, D-78457 Konstanz, Germany
关键词
measurement errors; modeling; photovoltaic cells; silicon; spectral analysis;
D O I
10.1109/16.701490
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
This note draws attention to possible errors when characterizing silicon solar cells by means of the effective minority carrier diffusion length L-eff as defined in the paper on "Numerical modeling of textured silicon solar cells using PC1D" by Basore [1]. The approximations underlying the analytical expression for L-eff are critically reviewed. Their impact on the determination of the minority carrier bulk diffusion length L-b from L-eff is discussed for a 250-mu m thick Si solar cell. It is found that considerable errors occur in the case of diffusion lengths larger than the cell thickness even when neglecting any measurement uncertainty.
引用
收藏
页码:1569 / 1574
页数:6
相关论文
共 13 条
[1]  
[Anonymous], P 23 IEEE PHOT SPEC
[2]   NUMERICAL MODELING OF TEXTURED SILICON SOLAR-CELLS USING PC-1D [J].
BASORE, PA .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (02) :337-343
[3]   Quantum efficiency analysis of thin-layer silicon solar cells with back surface fields and optical confinement [J].
Brendel, R ;
Hirsch, M ;
Plieninger, R ;
Werner, JH .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (07) :1104-1113
[4]  
BRENDEL R, 1995, P 13 EUR PHOT SOL EN, P428
[5]  
BRENDEL R, 1996, IQE1D MANUAL, P24
[6]  
Green M. A., SILICON SOLAR CELLS
[7]   ANALYSIS OF INTERNAL QUANTUM EFFICIENCY AND A NEW GRAPHICAL EVALUATION SCHEME [J].
HIRSCH, M ;
RAU, U ;
WERNER, JH .
SOLID-STATE ELECTRONICS, 1995, 38 (05) :1009-1015
[8]  
Hovel H. J., 1975, SEMICONDUCT SEMIMET, V11, P15
[9]  
RUIZ JM, 1997, P 14 EUR PHOT SOL EN, P2310
[10]  
*WAT MAPL INC, 1996, MAPLE V REL 4