Photoluminescence from exciton-exciton scattering in a lightly alloyed InGaN thin film under intense excitation conditions

被引：25

作者：

Nakayama, M ^{[1
]}

Kitano, R

Ando, M

Uemura, T

机构：

[1] Osaka City Univ, Grad Sch Engn, Dept Appl Phys, Sumiyoshi Ku, Osaka 5588585, Japan

[2] Toyoda Gosei Co, Optoelect Tech Div, Aichi 4901312, Japan

来源：

APPLIED PHYSICS LETTERS | 2005年 / 87卷 / 09期

关键词：

D O I：

10.1063/1.2037855

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the photoluminescence properties of a lightly alloyed In0.02Ga0.98N thin film at 10 K under intense excitation conditions. A photoluminescence band (P band) peculiar to the intense excitation condition has been clearly observed. The excitation-power dependence of the P-band intensity exhibits an almost quadratic behavior, accompanied by a threshold-like appearance. The threshold-excitation power for the P band is very low: similar to 3 kW/cm(2). At the threshold excitation power, the energy of the P band is lower than the energy of the n=1 A free exciton by the energy difference between the n=1 and n=2 exciton states. The results described above indicate that the P band originates from exciton-exciton scattering. Furthermore, we have confirmed the existence of optical gain leading to stimulated emission in the energy region of the P band by using transmission-type pump-probe spectroscopy.

引用

页数：3

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