Size-dependent radiative decay time of excitons in GaN/AlN self-assembled quantum dots

被引：76

作者：

Kako, S ^{[1
]}

Miyamura, M ^{[1
]}

Tachibana, K ^{[1
]}

Hoshino, K ^{[1
]}

Arakawa, Y ^{[1
]}

机构：

[1] Univ Tokyo, Adv Sci & Technol Res Ctr, Meguro Ku, Tokyo 1538904, Japan

来源：

APPLIED PHYSICS LETTERS | 2003年 / 83卷 / 05期

关键词：

D O I：

10.1063/1.1596382

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Size-dependent radiative decay time of excitons in GaN/AlN self-assembled quantum dots is reported. Two samples having different average size of quantum dots (QDs) have been investigated at the temperature of 3.5 K. The measurement has revealed that larger-QD sample shows longer photoluminescence (PL) decay time and smaller emission energy than smaller one. The dependence of radiative decay time of the samples on emission energy smoothly connects with each other reflecting the size distribution. The radiative decay time strongly increases by almost three orders magnitude, reaching microseconds, upon increasing the size of QDs. The increase of PL decay time with increasing the size of QDs is attributed to the reduction of oscillator-strength due to the strong built-in electric field in the GaN/AlN heterostructures. (C) 2003 American Institute of Physics.

引用

页码：984 / 986

页数：3

共 20 条

[1] Optical transitions and radiative lifetime in GaN/AlN self-organized quantum dots [J].

Andreev, AD ;

O'Reilly, EP .

APPLIED PHYSICS LETTERS, 2001, 79 (04) :521-523

[2] MULTIDIMENSIONAL QUANTUM WELL LASER AND TEMPERATURE-DEPENDENCE OF ITS THRESHOLD CURRENT [J].

ARAKAWA, Y ;

SAKAKI, H .

APPLIED PHYSICS LETTERS, 1982, 40 (11) :939-941

[3]

Bergman JP, 1997, PHYS STATUS SOLIDI A, V162, P65, DOI 10.1002/1521-396X(199707)162:1<65::AID-PSSA65>3.0.CO

[4]

2-2

[5] Stranski-Krastanov growth mode during the molecular beam epitaxy of highly strained GaN [J].

Daudin, B ;

Widmann, F ;

Feuillet, G ;

Samson, Y ;

Arlery, M ;

Rouviere, JL .

PHYSICAL REVIEW B, 1997, 56 (12) :R7069-R7072

[6]

Daudin B, 1999, MRS INTERNET J N S R, V4

[7] Time-resolved photoluminescence of GaN/Al0.5Ga0.5N quantum wells [J].

Harris, JC ;

Someya, T ;

Kako, S ;

Hoshino, K ;

Arakawa, Y .

APPLIED PHYSICS LETTERS, 2000, 77 (07) :1005-1007

[8] Reduction of oscillator strength due to piezoelectric fields in GaN/AlxGa1-xN quantum wells [J].

Im, JS ;

Kollmer, H ;

Off, J ;

Sohmer, A ;

Scholz, F ;

Hangleiter, A .

PHYSICAL REVIEW B, 1998, 57 (16) :R9435-R9438

[9] SIZE-DEPENDENT RADIATIVE DECAY TIME OF CONFINED EXCITONS IN CUCL MICROCRYSTALS [J].

ITOH, T ;

FURUMIYA, M ;

IKEHARA, T ;

GOURDON, C .

SOLID STATE COMMUNICATIONS, 1990, 73 (04) :271-274

[10] Recombination dynamics of free and localized excitons in GaN/Ga0.93Al0.07N quantum wells [J].

Lefebvre, P ;

Allegre, J ;

Gil, B ;

Kavokine, A ;

Mathieu, H ;

Kim, W ;

Salvador, A ;

Botchkarev, A ;

Morkoc, H .

PHYSICAL REVIEW B, 1998, 57 (16) :R9447-R9450

← 1 2 →