A p-type amorphous oxide semiconductor and room temperature fabrication of amorphous oxide p-n heterojunction diodes

被引：140

作者：

Narushima, S

Mizoguchi, H

Shimizu, K

Ueda, K

Ohta, H

Hirano, M

Kamiya, T

Hosono, H ^{[1
]}

机构：

[1] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

[2] Japan Sci & Technol Corp, Exploratory Res Adv Technol, Transparent Electroact Project, Takatsu Ku, Kawasaki, Kanagawa 2130012, Japan

[3] Keio Univ, Dept Econ, Yokohama, Kanagawa 2330061, Japan

来源：

ADVANCED MATERIALS | 2003年 / 15卷 / 17期

关键词：

D O I：

10.1002/adma.200304947

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A new class of semiconductor, a p-type wide-bandgap amorphous oxide, ZnO·Rh2O3, is introduced. As such, the ZnO·Rh2O3 film deposited at room temperature appears to be amorphous in X-ray diffraction measurement. Transmission electron microscopy (TEM) observation has revealed that these amorphous films are composed of very fine ordered structures that include only 4-6 RhO6 octahedra, which are formed as a consequence of the local edge-sharing network structure.

引用

页码：1409 / 1413

页数：5

共 30 条

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