Tritium autoradiography with thinned and back-side illuminated monolithic active pixel sensor device

被引：30

作者：

Deptuch, G

机构：

[1] ULP, IN2P3, LEPSI, F-67037 Strasbourg, France

[2] UST AGH, Dept Elect, PL-30059 Krakow, Poland

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2005年 / 543卷 / 2-3期

关键词：

monolithic active pixel sensors; CMOS; pixel detectors; autoradiography; tritium;

D O I：

10.1016/j.nima.2004.12.024

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

The first autoradiographic results of the tritium (H-3) marked source obtained with monolithic active pixel sensors are presented. The detector is a high-resolution, back-side illuminated imager, developed within the SUCIMA collaboration for low-energy (< 30 keV) electrons detection. The sensitivity to these energies is obtained by thinning the detector, originally fabricated in the form of a standard VLSI chip, down to the thickness of the epitaxial layer. The detector used is the 1 x 10(6) pixel, thinned MIMOSA V chip. The low noise performance and thin (similar to 160 nm) entrance window provide the sensitivity of the device to energies as low as similar to 4 keV. A polymer tritium source was parked directly atop the detector in open-air conditions. A real-time image of the source was obtained. (c) 2005 Elsevier B.V. All rights reserved.

引用

页码：537 / 548

页数：12

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